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IRF7507TRPBF
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 2.4 A, 2.4 A, 0.14 ohm
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ManufacturerINFINEON
Manufacturer Part NoIRF7507TRPBF
Newark Part No.39M3576
Also Known AsSP001555486
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF7507TRPBF
Newark Part No.39M3576
Also Known AsSP001555486
Technical Datasheet
Channel TypeComplementary N and P Channel
Continuous Drain Current Id2.4A
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id N Channel2.4A
Continuous Drain Current Id P Channel2.4A
Drain Source On State Resistance N Channel0.14ohm
Drain Source On State Resistance P Channel0.27ohm
Transistor Case StyleMSOP
No. of Pins8Pins
Power Dissipation N Channel1.25W
Power Dissipation P Channel1.25W
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (23-Jan-2024)
Product Overview
The IRF7507TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The low profile (<lt/>1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
- Generation V technology
- Ultra low ON-resistance
- Low profile
- Fast switching performance
Applications
Industrial, Power Management
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds
20V
Continuous Drain Current Id P Channel
2.4A
Drain Source On State Resistance P Channel
0.27ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.25W
Qualification
-
MSL
MSL 2 - 1 year
Continuous Drain Current Id
2.4A
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
2.4A
Drain Source On State Resistance N Channel
0.14ohm
Transistor Case Style
MSOP
Power Dissipation N Channel
1.25W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate