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IRF7314TRPBF
Dual MOSFET, P Channel, 20 V, 20 V, 5.3 A, 5.3 A, 0.049 ohm
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ManufacturerINFINEON
Manufacturer Part NoIRF7314TRPBF
Newark Part No.
Re-Reel42Y0406
Cut Tape42Y0406
Your Part Number
Technical Datasheet
No Longer Available
Packaging Options
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF7314TRPBF
Newark Part No.
Re-Reel42Y0406
Cut Tape42Y0406
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id5.3A
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel5.3A
Continuous Drain Current Id P Channel5.3A
Drain Source On State Resistance N Channel0.049ohm
Drain Source On State Resistance P Channel0.058ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (23-Jan-2024)
Product Overview
The IRF7314TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Generation V technology
- Ultra low ON-resistance
- Surface-mount device
- Fully avalanche rated
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
5.3A
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
5.3A
Drain Source On State Resistance P Channel
0.058ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds
20V
Continuous Drain Current Id N Channel
5.3A
Drain Source On State Resistance N Channel
0.049ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate