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IRF6645TRPBF
Power MOSFET, N Channel, 100 V, 25 A, 35 mohm, DirectFET SJ, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRF6645TRPBFCopy
Manufacturer Standard Lead Time22 weeks
Newark Part No.
Full Reel86AK5364
Re-Reel13AC9183RL
Cut Tape13AC9183
Product RangeHEXFET Series
Your Part Number
1,705 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $2.020 | $2.02 |
| Total Price | $2.02 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $2.020 |
| 50+ | $1.070 |
| 100+ | $0.952 |
| 250+ | $0.857 |
| 500+ | $0.762 |
| 1000+ | $0.719 |
| 2500+ | $0.615 |
| 5000+ | $0.603 |
Full Reel
| Quantity | Price |
|---|---|
| 4800+ | $0.916 |
| 14400+ | $0.879 |
| 24000+ | $0.861 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF6645TRPBFCopy
Manufacturer Standard Lead Time22 weeks
Newark Part No.
Full Reel86AK5364
Re-Reel13AC9183RL
Cut Tape13AC9183
Product RangeHEXFET Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id25A
Drain Source On State Resistance35mohm
On Resistance Rds(on)0.028ohm
Transistor Case StyleDirectFET SJ
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.9V
Power Dissipation42W
Power Dissipation Pd42W
No. of Pins7Pins
Operating Temperature Max150°C
Product RangeHEXFET Series
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
Single N-channel strongIRFET™ power MOSFET in a DirectFET™ SJ package suitable for use in power supplies and isolated DC-DC converters.
- Optimized for synchronous rectification
- Application specific MOSFET
- Product qualification according to JEDEC standard
- High-current rating
- Dual-side cooling capability
- High power density
- Optimum thermal performance
- Compact form factor
- High efficiency
- Environmentally friendly
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
35mohm
Transistor Case Style
DirectFET SJ
Rds(on) Test Voltage
10V
Power Dissipation
42W
No. of Pins
7Pins
Product Range
HEXFET Series
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
25A
On Resistance Rds(on)
0.028ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4.9V
Power Dissipation Pd
42W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate