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IRF640NSTRLPBF
Power MOSFET, N Channel, 200 V, 18 A, 150 mohm, TO-263AB, Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIRF640NSTRLPBF
Newark Part No.
Re-Reel42Y0392
Cut Tape42Y0392
Your Part Number
824 In Stock
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $2.120 | $2.12 |
| Total Price | $2.12 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $2.120 |
| 10+ | $1.340 |
| 25+ | $1.230 |
| 50+ | $1.130 |
| 100+ | $1.020 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF640NSTRLPBF
Newark Part No.
Re-Reel42Y0392
Cut Tape42Y0392
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id18A
Drain Source On State Resistance150mohm
On Resistance Rds(on)0.15ohm
Transistor Case StyleTO-263AB
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd150W
Gate Source Threshold Voltage Max4V
Power Dissipation150W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The IRF640NSTRLPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
- Advanced process technology
- Dynamic dV/dt rating
- Fully avalanche rating
- Ease of paralleling
- Simple drive requirements
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
150mohm
Transistor Case Style
TO-263AB
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
18A
On Resistance Rds(on)
0.15ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
150W
Power Dissipation
150W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate