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IRF60B217
MOSFET, N-CH, 60V, 60A, TO-220AB
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRF60B217
Newark Part No.12AC9751
Product RangeStrongIRFET, HEXFET
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF60B217
Newark Part No.12AC9751
Product RangeStrongIRFET, HEXFET
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id60A
On Resistance Rds(on)0.0073ohm
Drain Source On State Resistance7300µohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.7V
Power Dissipation83W
Power Dissipation Pd83W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeStrongIRFET, HEXFET
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.0073ohm
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
83W
No. of Pins
3Pins
Product Range
StrongIRFET, HEXFET
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
60A
Drain Source On State Resistance
7300µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.7V
Power Dissipation Pd
83W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability