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IPP60R190P6XKSA1
Power MOSFET, N Channel, 600 V, 20.2 A, 0.19 ohm, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPP60R190P6XKSA1Copy
Manufacturer Standard Lead Time8 weeks
Newark Part No.54X5228
Also Known AsIPP60R190P6, SP001017066
Your Part Number
778 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $2.690 |
| 10+ | $2.060 |
| 100+ | $1.640 |
| 500+ | $1.370 |
| 1000+ | $1.170 |
| 2500+ | $1.110 |
| 5000+ | $1.080 |
Price for:Each
Minimum: 1
Multiple: 1
$2.69
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPP60R190P6XKSA1Copy
Manufacturer Standard Lead Time8 weeks
Newark Part No.54X5228
Also Known AsIPP60R190P6, SP001017066
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id20.2A
On Resistance Rds(on)0.171ohm
Drain Source On State Resistance0.19ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd151W
Gate Source Threshold Voltage Max4V
Power Dissipation151W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The IPP60R190P6 is a 600V CoolMOS™ P6 N-channel Power MOSFET with reduced gate charge. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ P6 combines the experience of the leading SJ MOSFET supplier with high class innovation. The device provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
- Extremely low losses due to very low figure of merit (RDS (ON) x Qg and EOSS)
- Very high commutation ruggedness
- Easy to use
- Increased dV/dt ruggedness
- Halogen-free, Green device
- Qualified according to JEDEC for target applications
- Higher Vth
- Optimized integrated Rg
- Improved efficiency especially in light load condition
- Better efficiency in soft switching applications due to earlier turn-OFF
- Suitable for hard and soft-switching topologies
- Optimized balance of efficiency and ease of use and good controllability of switching behaviour
- High robustness and better efficiency
- Outstanding quality and reliability
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.171ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
20.2A
Drain Source On State Resistance
0.19ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
151W
Power Dissipation
151W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
