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IPP60R022S7XKSA1
MOSFET, N-CH, 600V, 23A, TO-220 ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPP60R022S7XKSA1
Newark Part No.80AH9601
Product RangeCoolMOS SJ S7
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 57 week(s)
| Quantity | Price |
|---|---|
| 1+ | $12.500 |
| 10+ | $8.650 |
| 25+ | $8.300 |
| 50+ | $8.020 |
| 100+ | $7.880 |
Price for:Each
Minimum: 1
Multiple: 1
$12.50
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPP60R022S7XKSA1
Newark Part No.80AH9601
Product RangeCoolMOS SJ S7
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id23A
On Resistance Rds(on)0.02ohm
Drain Source On State Resistance0.02ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage12V
Gate Source Threshold Voltage Max4V
Power Dissipation390W
Power Dissipation Pd390W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS SJ S7
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.02ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
12V
Power Dissipation
390W
No. of Pins
3Pins
Product Range
CoolMOS SJ S7
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
23A
Drain Source On State Resistance
0.02ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
390W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability