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IPP052NE7N3GXKSA1
MOSFET Transistor, N Channel, 80 A, 75 V, 0.0047 ohm, 10 V, 3.1 V RoHS Compliant: Yes
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ManufacturerINFINEON
Manufacturer Part NoIPP052NE7N3GXKSA1
Newark Part No.50Y2055
Product RangeOptiMOS 3 Series
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPP052NE7N3GXKSA1
Newark Part No.50Y2055
Product RangeOptiMOS 3 Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id80A
On Resistance Rds(on)0.0047ohm
Drain Source On State Resistance5200µohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd150W
Gate Source Threshold Voltage Max3.8V
Power Dissipation150W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS 3 Series
Qualification-
SVHCNo SVHC (21-Jan-2025)
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Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
75V
On Resistance Rds(on)
0.0047ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3.8V
No. of Pins
3Pins
Product Range
OptiMOS 3 Series
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
80A
Drain Source On State Resistance
5200µohm
Transistor Mounting
Through Hole
Power Dissipation Pd
150W
Power Dissipation
150W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate