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IPD90N03S4L02ATMA1
Power MOSFET, N Channel, 30 V, 90 A, 0.0022 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPD90N03S4L02ATMA1Copy
Manufacturer Standard Lead Time11 weeks
Newark Part No.
Full Reel86AK5240
Re-Reel85X6035RL
Cut Tape85X6035
Your Part Number
18,674 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $2.510 | $2.51 |
| Total Price | $2.51 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $2.510 |
| 50+ | $1.450 |
| 100+ | $1.110 |
| 250+ | $1.000 |
| 500+ | $0.892 |
| 1000+ | $0.820 |
| 2500+ | $0.763 |
| 5000+ | $0.748 |
Full Reel
| Quantity | Price |
|---|---|
| 2500+ | $0.755 |
| 5000+ | $0.730 |
| 10000+ | $0.705 |
| 15000+ | $0.701 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD90N03S4L02ATMA1Copy
Manufacturer Standard Lead Time11 weeks
Newark Part No.
Full Reel86AK5240
Re-Reel85X6035RL
Cut Tape85X6035
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id90A
Drain Source On State Resistance2200µohm
On Resistance Rds(on)0.0018ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation Pd136W
Power Dissipation136W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Product Overview
The IPD90N03S4L-02 is a N-channel enhancement-mode MOSFET with low switching and conduction power losses for highest thermal efficiency.
- AEC-Q101 qualified
- MSL1 up to 260°C peak reflow
- Green device
- 100% Avalanche tested
- Optimized total gate charge enables smaller driver output stages
- Ultra low RDS (ON)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
2200µohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation Pd
136W
No. of Pins
3Pins
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
90A
On Resistance Rds(on)
0.0018ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
Power Dissipation
136W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate