IPD60R380C6ATMA1
MOSFET,N CH,600V,10.6A,TO252
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IPD60R380C6ATMA1Copy |
| Manufacturer Standard Lead Time | 28 weeks |
| Newark Part No. | 30T1835 |
| Also Known As | IPD60R380C6, SP001117716 |
| Your Part Number | |
| Technical Datasheet |
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| Quantity | Price |
|---|---|
| 1+ | $2.510 |
| 10+ | $1.280 |
| 100+ | $1.100 |
| 500+ | $0.913 |
| 1000+ | $0.839 |
| 2500+ | $0.742 |
| 10000+ | $0.727 |
Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IPD60R380C6ATMA1Copy |
| Manufacturer Standard Lead Time | 28 weeks |
| Newark Part No. | 30T1835 |
| Also Known As | IPD60R380C6, SP001117716 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 650V |
| Continuous Drain Current Id | 10.6A |
| Drain Source On State Resistance | 0.38ohm |
| On Resistance Rds(on) | 0.34ohm |
| Transistor Case Style | TO-252 (DPAK) |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Power Dissipation Pd | 83W |
| Gate Source Threshold Voltage Max | 3V |
| Power Dissipation | 83W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The IPD60R380C6 is a 600V N-channel CoolMOS™ Power MOSFET designed according to the Superjunction (SJ) principle with high class innovation. The C6 MOSFET provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. CoolMOS™ Superjunction power MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems.
- Easy to control of switching behaviour
- Very high commutation ruggedness
- Better light load efficiency compared to C3
- Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness
- Improved power density
- Improved reliability
- Improved efficiency in hard switching applications
- Reduces possible ringing due to PCB layout
Applications
Consumer Electronics, Power Management, Communications & Networking, Computers & Computer Peripherals, Alternative Energy, Lighting
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 10.6A |
| On Resistance Rds(on) | 0.34ohm |
| Transistor Mounting | Surface Mount |
| Power Dissipation Pd | 83W |
| Power Dissipation | 83W |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
| Drain Source Voltage Vds | 650V |
|---|---|
| Drain Source On State Resistance | 0.38ohm |
| Transistor Case Style | TO-252 (DPAK) |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 3V |
| No. of Pins | 3Pins |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |