Print Page
IPD25CN10NGATMA1
Power MOSFET, N Channel, 100 V, 35 A, 0.025 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPD25CN10NGATMA1Copy
Newark Part No.47W3470
Also Known AsIPD25CN10N G, SP001127810
Your Part Number
2,006 In Stock
Need more?
Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $1.790 |
| 10+ | $1.140 |
| 100+ | $0.762 |
| 500+ | $0.602 |
| 1000+ | $0.549 |
| 2500+ | $0.510 |
Price for:Each
Minimum: 1
Multiple: 1
$1.79
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD25CN10NGATMA1Copy
Newark Part No.47W3470
Also Known AsIPD25CN10N G, SP001127810
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id35A
On Resistance Rds(on)0.019ohm
Drain Source On State Resistance0.025ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd71W
Gate Source Threshold Voltage Max3V
Power Dissipation71W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The IPD25CN10N G is a 100V N-channel Power MOSFET that offers superior solutions for high efficiency and high power-density SMPS. Compared to other transistors, this MOSFET achieves a reduction of 30% in both RDS (on) and FOM (Figure of Merit). The OptiMOS™ MOSFET offers industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
- Excellent switching performance
- Environmentally-friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy to design
Applications
Power Management, Motor Drive & Control, Industrial, Audio
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.019ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 3 - 168 hours
Channel Type
N Channel
Continuous Drain Current Id
35A
Drain Source On State Resistance
0.025ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
71W
Power Dissipation
71W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Alternatives for IPD25CN10NGATMA1
3 Products Found
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability