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IPB180N10S402ATMA1
Power MOSFET, N Channel, 100 V, 180 A, 0.0025 ohm, TO-263 (D2PAK), Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIPB180N10S402ATMA1
Newark Part No.13AC9029
Product RangeOptiMOS T2 Series
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $6.160 |
| 10+ | $4.270 |
| 25+ | $3.930 |
| 50+ | $3.590 |
| 100+ | $3.250 |
| 250+ | $3.170 |
| 500+ | $3.080 |
| 1000+ | $2.500 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB180N10S402ATMA1
Newark Part No.13AC9029
Product RangeOptiMOS T2 Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id180A
Drain Source On State Resistance0.0025ohm
On Resistance Rds(on)0.0029ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.7V
Power Dissipation Pd300W
Power Dissipation300W
No. of Pins7Pins
Operating Temperature Max175°C
Product RangeOptiMOS T2 Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (21-Jan-2025)
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Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0025ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation Pd
300W
No. of Pins
7Pins
Product Range
OptiMOS T2 Series
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
180A
On Resistance Rds(on)
0.0029ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.7V
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate