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IPB025N10N3GATMA1
Power MOSFET, N Channel, 100 V, 180 A, 0.0025 ohm, TO-263 (D2PAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPB025N10N3GATMA1Copy
Newark Part No.47W3462
Also Known AsIPB025N10N3 G, SP000469888
Your Part Number
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| Quantity | Price |
|---|---|
| 1+ | $7.320 |
| 10+ | $4.930 |
| 25+ | $4.480 |
| 50+ | $4.030 |
| 100+ | $3.570 |
| 250+ | $3.470 |
| 500+ | $3.380 |
Price for:Each
Minimum: 1
Multiple: 1
$7.32
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB025N10N3GATMA1Copy
Newark Part No.47W3462
Also Known AsIPB025N10N3 G, SP000469888
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id180A
Drain Source On State Resistance0.0025ohm
On Resistance Rds(on)0.002ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd300W
Gate Source Threshold Voltage Max2.7V
Power Dissipation300W
No. of Pins7Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The IPB025N10N3 G is a 100V N-channel Power MOSFET that offers superior solutions for high efficiency and high power-density SMPS. Compared to other transistors, this MOSFET achieves a reduction of 30% in both RDS (on) and FOM (Figure of Merit). The OptiMOS™ MOSFET offers industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
- Excellent switching performance
- Environmentally-friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy to design
Applications
Power Management, Motor Drive & Control, Industrial, Audio
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0025ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.7V
No. of Pins
7Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
180A
On Resistance Rds(on)
0.002ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
300W
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate