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IMT65R075M2HXUMA1
MOSFET, N-CH, 650V, 33.7A, HSOF
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIMT65R075M2HXUMA1Copy
Manufacturer Standard Lead Time9 weeks
Newark Part No.12AN6478
Product RangeCoolSiC G2 Series
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 9 week(s)
| Quantity | Price |
|---|---|
| 1+ | $5.680 |
| 50+ | $5.010 |
| 100+ | $4.590 |
| 250+ | $4.150 |
| 500+ | $3.610 |
| 1000+ | $2.860 |
| 2500+ | $2.720 |
| 5000+ | $2.550 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$5.68
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIMT65R075M2HXUMA1Copy
Manufacturer Standard Lead Time9 weeks
Newark Part No.12AN6478
Product RangeCoolSiC G2 Series
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id33.7A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.068ohm
Transistor Case StyleHSOF
No. of Pins8Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max5.6V
Power Dissipation178W
Operating Temperature Max175°C
Product RangeCoolSiC G2 Series
SVHCNo SVHC (27-Jun-2018)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
33.7A
Drain Source On State Resistance
0.068ohm
No. of Pins
8Pins
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
175°C
SVHC
No SVHC (27-Jun-2018)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
HSOF
Rds(on) Test Voltage
20V
Power Dissipation
178W
Product Range
CoolSiC G2 Series
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability