Print Page
IMBG120R022M2HXTMA1
SIC MOSFET, N-CH, 1.2KV, 87A, TO-263HV-7
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIMBG120R022M2HXTMA1Copy
Newark Part No.97AK2406
Product RangeCoolSiC Mosfet 1200V G2
Your Part Number
2,034 In Stock
Need more?
200 Delivery in 1-3 Business Days(US stock)
1834 Delivery in 2-4 Business Days(UK stock)
Order before 8pm EST Standard Shipping
| Quantity | Price |
|---|---|
| 1+ | $16.330 |
| 10+ | $11.750 |
| 25+ | $11.200 |
| 50+ | $10.630 |
| 100+ | $10.070 |
| 250+ | $9.850 |
| 500+ | $9.630 |
| 1000+ | $9.400 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$16.33
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIMBG120R022M2HXTMA1Copy
Newark Part No.97AK2406
Product RangeCoolSiC Mosfet 1200V G2
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id87A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.0216ohm
Transistor Case StyleTO-263HV
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.1V
Power Dissipation385W
Operating Temperature Max175°C
Product RangeCoolSiC Mosfet 1200V G2
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
87A
Drain Source On State Resistance
0.0216ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
5.1V
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-263HV
Rds(on) Test Voltage
18V
Power Dissipation
385W
Product Range
CoolSiC Mosfet 1200V G2
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate