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IGO60R070D1AUMA1
Gallium Nitride (GaN) Transistor, 600 V, 31 A, 0.055 ohm, 5.8 nC, PG-DSO-20-85, Surface Mount
Packaging Options
No Longer Available
Product Information
ManufacturerINFINEON
Manufacturer Part NoIGO60R070D1AUMA1
Newark Part No.84AC1770
Product RangeCoolGaN
Technical Datasheet
Drain Source Voltage Vds600V
Continuous Drain Current Id31A
Drain Source On State Resistance0.055ohm
On Resistance Rds(on) Max0.055ohm
Typical Gate Charge5.8nC
Transistor Case StylePG-DSO-20-85
Transistor MountingSurface Mount
No. of Pins20Pins
Product RangeCoolGaN
Qualification-
SVHCNo SVHC (27-Jun-2018)
Product Overview
Infineon launches a GaN enhancement mode high electron mobility transistor (e‑mode HEMT) portfolio with industry‑leading field performance, enabling rugged and reliable systems at an attractive overall system cost. CoolGaN™ transistors are built with the most reliable GaN technology and are tailor‑made to deliver the market’s highest efficiency and density levels in switched mode power supplies. The application‑based qualification approach extends beyond that of other GaN products in the market.
Technical Specifications
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.055ohm
Typical Gate Charge
5.8nC
Transistor Mounting
Surface Mount
Product Range
CoolGaN
SVHC
No SVHC (27-Jun-2018)
Continuous Drain Current Id
31A
On Resistance Rds(on) Max
0.055ohm
Transistor Case Style
PG-DSO-20-85
No. of Pins
20Pins
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate