CY62157EV30LL-45BVXIT

CY62157EV30LL-45BVXIT is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (active-low CE1 HIGH or active-low CE2 LOW or both active-low BHE and active-low BLE are HIGH). The input or output pins (I/O0 through I/O15) are placed in a high impedance state when the device is deselected (active-low CE1 HIGH or active-low CE2 LOW), the outputs are disabled (active-low OE HIGH), byte high enable and byte low enable are disabled (active-low BHE, active-low BLE HIGH), or a write operation is active (active-low CE1 LOW, active-low CE2 HIGH and active-low WE LOW).

• High speed: 45ns
• Pin compatible with CY62157DV30
• Maximum standby current is 8µA (industrial)
• Typical active current is 6mA at f=1MHz
• Easy memory expansion with active-low CE1, active-low CE2, and active-low OE features
• Automatic power down when deselected
• Complementary metal oxide semiconductor (CMOS) for optimum speed and power
• Wide voltage range from 2.20V to 3.60V
• 48-ball VFBGA package
• Industrial ambient temperature range from -40°C to +85°C