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BSZ900N15NS3GATMA1
Power MOSFET, N Channel, 150 V, 13 A, 0.09 ohm, TSDSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSZ900N15NS3GATMA1Copy
Manufacturer Standard Lead Time52 weeks
Newark Part No.
Full Reel86AK4599
Re-Reel50Y1837RL
Cut Tape50Y1837
Also Known AsBSZ900N15NS3 G, SP000677866
Your Part Number
9,971 In Stock
50,000 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $1.440 | $1.44 |
| Total Price | $1.44 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $1.440 |
| 50+ | $0.671 |
| 100+ | $0.596 |
| 250+ | $0.530 |
| 500+ | $0.463 |
| 1000+ | $0.454 |
| 2500+ | $0.444 |
| 5000+ | $0.435 |
Full Reel
| Quantity | Price |
|---|---|
| 5000+ | $0.356 |
| 15000+ | $0.349 |
| 25000+ | $0.342 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSZ900N15NS3GATMA1Copy
Manufacturer Standard Lead Time52 weeks
Newark Part No.
Full Reel86AK4599
Re-Reel50Y1837RL
Cut Tape50Y1837
Also Known AsBSZ900N15NS3 G, SP000677866
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id13A
Drain Source On State Resistance0.09ohm
On Resistance Rds(on)0.074ohm
Transistor Case StyleTSDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd38W
Gate Source Threshold Voltage Max3V
Power Dissipation38W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The BSZ900N15NS3 G is an OptiMOS™ N-channel Power MOSFET ideal for high-frequency switching and synchronous rectification. It achieves a reduction in RDS (ON) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.
- Excellent switching performance
- World's lowest RDS (ON)
- Very low Qg and Qgd
- Excellent gate charge x RDS (ON) product (FOM)
- MSL1 rated 2
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- Normal level
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
150V
Drain Source On State Resistance
0.09ohm
Transistor Case Style
TSDSON
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
13A
On Resistance Rds(on)
0.074ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
38W
Power Dissipation
38W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
