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BSS306NH6327XTSA1
Power MOSFET, N Channel, 30 V, 2.3 A, 0.044 ohm, SOT-23, Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoBSS306NH6327XTSA1
Newark Part No.
Re-Reel85X4156
Cut Tape85X4156
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $0.47 |
| 10+ | $0.24 |
| 25+ | $0.21 |
| 50+ | $0.19 |
| 100+ | $0.17 |
| 250+ | $0.16 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBSS306NH6327XTSA1
Newark Part No.
Re-Reel85X4156
Cut Tape85X4156
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id2.3A
On Resistance Rds(on)0.044ohm
Drain Source On State Resistance0.057ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.6V
Power Dissipation500mW
Power Dissipation Pd500mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
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Product Overview
- OptiMOS™ 2 small-signal-transistor
- N-channel
- Enhancement mode
- Logic level (4.5V rated)
- Avalanche rated
- Qualified according to AEC Q101
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.044ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
500mW
No. of Pins
3Pins
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Continuous Drain Current Id
2.3A
Drain Source On State Resistance
0.057ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.6V
Power Dissipation Pd
500mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate