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BSS139H6327XTSA1
Power MOSFET, N Channel, 250 V, 100 mA, 14 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSS139H6327XTSA1Copy
Manufacturer Standard Lead Time11 weeks
Newark Part No.
Full Reel86AK4542
Re-Reel87X8601RL
Cut Tape87X8601
Your Part Number
90,480 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $0.588 | $0.59 |
| Total Price | $0.59 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.588 |
| 50+ | $0.363 |
| 100+ | $0.231 |
| 250+ | $0.203 |
| 500+ | $0.174 |
| 1000+ | $0.155 |
| 2500+ | $0.152 |
| 5000+ | $0.149 |
Full Reel
| Quantity | Price |
|---|---|
| 6000+ | $0.149 |
| 18000+ | $0.130 |
| 30000+ | $0.127 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSS139H6327XTSA1Copy
Manufacturer Standard Lead Time11 weeks
Newark Part No.
Full Reel86AK4542
Re-Reel87X8601RL
Cut Tape87X8601
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id100mA
On Resistance Rds(on)7.8ohm
Drain Source On State Resistance14ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max-1.4V
Power Dissipation360mW
Power Dissipation Pd360mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
BSS139H6327XTSA1 is a N-channel, SIPMOS® small signal transistor in a PG-SOT-23 package.
- Depletion mode, dv /dt rated
- 0.10A continuous drain current (at T j=25°C), 0.4A pulsed drain current (TA=25°C)
- 6kV/µs reverse diode dv /dt (D=0.1A, VDS=200V, di /dt =200A/µs, T j max=150°C)
- Gate source voltage is ±20V, 350K/W max thermal resistance, junction (ambient)
- 250V minimum drain-source breakdown voltage (VGS=-3V, ID=250µA)
- Gate threshold voltage range from -2.1 to -1V (VDS=3V, ID=56µA)
- 30mA minimum on-state drain current (VGS=0V, VDS=10V)
- 0.13S typical transconductance ( VDS <gt/>2 ID RDS(on)max, ID=0.08A)
- Operating and storage temperature range from -55 to 150°C
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
250V
On Resistance Rds(on)
7.8ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
360mW
No. of Pins
3Pins
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Continuous Drain Current Id
100mA
Drain Source On State Resistance
14ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
-1.4V
Power Dissipation Pd
360mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
-
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate