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BSM25GD120DN2BOSA1
IGBT Module, Three Phase Full Bridge, 35 A, 2.5 V, 200 W, 150 °C, EconoPACK
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ManufacturerINFINEON
Manufacturer Part NoBSM25GD120DN2BOSA1
Newark Part No.95M4164
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSM25GD120DN2BOSA1
Newark Part No.95M4164
Technical Datasheet
IGBT ConfigurationThree Phase Full Bridge
Transistor PolarityN Channel
DC Collector Current35A
Continuous Collector Current35A
Collector Emitter Saturation Voltage Vce(on)2.5V
Collector Emitter Saturation Voltage2.5V
Power Dissipation200W
Power Dissipation Pd200W
Collector Emitter Voltage V(br)ceo1.2kV
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Transistor Case StyleEconoPACK
No. of Pins17Pins
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
IGBT Technology-
Transistor MountingPanel
Product Range-
SVHCNo SVHC (17-Jan-2023)
Product Overview
The BSM25GD120DN2 is an IGBT Power Module with fast free wheel diodes and insulated metal base plate.
- 3-phase Full bridge
- 130ns Rise time
- 100ns Fall time
- ±20V Gate-emitter voltage
Technical Specifications
IGBT Configuration
Three Phase Full Bridge
DC Collector Current
35A
Collector Emitter Saturation Voltage Vce(on)
2.5V
Power Dissipation
200W
Collector Emitter Voltage V(br)ceo
1.2kV
Junction Temperature, Tj Max
150°C
No. of Pins
17Pins
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
No SVHC (17-Jan-2023)
Transistor Polarity
N Channel
Continuous Collector Current
35A
Collector Emitter Saturation Voltage
2.5V
Power Dissipation Pd
200W
Operating Temperature Max
150°C
Transistor Case Style
EconoPACK
IGBT Termination
Stud
IGBT Technology
-
Product Range
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate