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BSC360N15NS3GATMA1
Power MOSFET, N Channel, 150 V, 33 A, 0.031 ohm, TDSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSC360N15NS3GATMA1Copy
Newark Part No.
Re-Reel85X4154
Cut Tape85X4154
Also Known AsBSC360N15NS3 G, SP000778134
Your Part Number
7,503 In Stock
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $2.970 | $2.97 |
| Total Price | $2.97 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $2.970 |
| 10+ | $1.900 |
| 25+ | $1.690 |
| 50+ | $1.490 |
| 100+ | $1.290 |
| 250+ | $1.180 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC360N15NS3GATMA1Copy
Newark Part No.
Re-Reel85X4154
Cut Tape85X4154
Also Known AsBSC360N15NS3 G, SP000778134
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id33A
Drain Source On State Resistance0.031ohm
On Resistance Rds(on)0.031ohm
Transistor Case StyleTDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd74W
Gate Source Threshold Voltage Max3V
Power Dissipation74W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The BSC360N15NS3 G is an OptiMOS™ N-channel Power MOSFET ideal for high-frequency switching and synchronous rectification. It achieves a reduction in RDS (ON) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.
- Excellent switching performance
- World's lowest RDS (ON)
- Very low Qg and Qgd
- Excellent gate charge x RDS (ON) product (FOM)
- MSL1 rated 2
- Environmentally friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- Normal level
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
150V
Drain Source On State Resistance
0.031ohm
Transistor Case Style
TDSON
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
33A
On Resistance Rds(on)
0.031ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
74W
Power Dissipation
74W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate