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BSC035N04LSGATMA1
Power MOSFET, N Channel, 40 V, 100 A, 0.0035 ohm, TDSON, Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoBSC035N04LSGATMA1
Newark Part No.
Re-Reel50Y1800
Cut Tape50Y1800
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $1.60 |
| 10+ | $0.93 |
| 25+ | $0.86 |
| 50+ | $0.80 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC035N04LSGATMA1
Newark Part No.
Re-Reel50Y1800
Cut Tape50Y1800
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id100A
On Resistance Rds(on)0.0029ohm
Drain Source On State Resistance0.0035ohm
Transistor Case StyleTDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation Pd69W
Power Dissipation69W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
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Product Overview
- N-channel Optima's ™ 3 power transistor
- Fast switching MOSFET for SMPS
- Optimized technology for DC/DC converters
- Qualified according to JEDEC for target applications
- Excellent gate charge x RDS(on) product (FOM)
- Very low on-resistance RDS(on)
- Superior thermal resistance
- 100% avalanche tested
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.0029ohm
Transistor Case Style
TDSON
Rds(on) Test Voltage
10V
Power Dissipation Pd
69W
No. of Pins
8Pins
Product Range
-
MSL
MSL 3 - 168 hours
Channel Type
N Channel
Continuous Drain Current Id
100A
Drain Source On State Resistance
0.0035ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
Power Dissipation
69W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate