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BSC030P03NS3GAUMA1
Power MOSFET, P Channel, 30 V, 100 A, 0.003 ohm, TDSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSC030P03NS3GAUMA1Copy
Manufacturer Standard Lead Time52 weeks
Newark Part No.
Full Reel86AK4436
Re-Reel85X4150RL
Cut Tape85X4150
Also Known AsBSC030P03NS3 G, SP000442470
Your Part Number
6,855 In Stock
80,000 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $2.990 | $14.95 |
| Total Price | $14.95 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | $2.990 |
| 50+ | $1.940 |
| 100+ | $1.330 |
| 250+ | $1.210 |
| 500+ | $1.080 |
| 1000+ | $1.030 |
| 2500+ | $1.010 |
| 5000+ | $0.989 |
Full Reel
| Quantity | Price |
|---|---|
| 5000+ | $0.912 |
| 15000+ | $0.894 |
| 25000+ | $0.876 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC030P03NS3GAUMA1Copy
Manufacturer Standard Lead Time52 weeks
Newark Part No.
Full Reel86AK4436
Re-Reel85X4150RL
Cut Tape85X4150
Also Known AsBSC030P03NS3 G, SP000442470
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id100A
Drain Source On State Resistance3000µohm
On Resistance Rds(on)0.0023ohm
Transistor Case StyleTDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd125W
Gate Source Threshold Voltage Max2.5V
Power Dissipation125W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Product Overview
The BSC030P03NS3 G is a P-channel OptiMOS™ power MOSFET consistently meet the highest quality and performance demands in key specifications for power system design such as ON-state resistance and figure of merit characteristics. It is suitable for use with DC-to-DC converters, eMobility, notebook and on-board charger applications.
- Enhancement-mode
- Normal level, logic level or super logic level
- Avalanche rated
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
3000µohm
Transistor Case Style
TDSON
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
-
MSL
MSL 3 - 168 hours
Channel Type
P Channel
Continuous Drain Current Id
100A
On Resistance Rds(on)
0.0023ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
125W
Power Dissipation
125W
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate