Print Page
BSC020N03MSGATMA1
Power MOSFET, N Channel, 30 V, 100 A, 0.002 ohm, PG-TSDSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSC020N03MSGATMA1
Newark Part No.60R2480
Also Known AsBSC020N03MS G, SP000311503
Your Part Number
No Longer Available
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC020N03MSGATMA1
Newark Part No.60R2480
Also Known AsBSC020N03MS G, SP000311503
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id100A
Drain Source On State Resistance0.002ohm
On Resistance Rds(on)0.0017ohm
Transistor Case StylePG-TDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd96W
Gate Source Threshold Voltage Max1V
Power Dissipation96W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Alternatives for BSC020N03MSGATMA1
4 Products Found
Product Overview
The BSC020N03MS G is an OptiMOS™ N-channel Power MOSFET sets new standards in power density and energy efficiency. It is tailored to the needs of power management by improved EMI behaviour, as well as increased battery life.
- Easy to design in
- Increased battery lifetime
- Improved EMI behaviour making external snubber networks obsolete
- Saving space
- Reducing power losses
- Low FOMSW for high frequency SMPS
- 100% Avalanche tested
- Very low ON-resistance RDS (ON) @ VGS = 4.5V
- Excellent gate charge x RDS (ON) product (FOM)
- Qualified according to JEDEC for target applications
- Superior thermal resistance
- Halogen-free, Green device
Applications
Power Management, Motor Drive & Control, LED Lighting, Computers & Computer Peripherals, Portable Devices, Consumer Electronics
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
100A
On Resistance Rds(on)
0.0017ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
96W
Power Dissipation
96W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.002ohm
Transistor Case Style
PG-TDSON
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate