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BSC010N04LSATMA1
Power MOSFET, N Channel, 40 V, 100 A, 0.001 ohm, TDSON, Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoBSC010N04LSATMA1
Newark Part No.
Re-Reel50Y1792
Cut Tape50Y1792
Also Known AsBSC010N04LS, SP000928282
Your Part Number
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $2.840 | $2.84 |
| Total Price | $2.84 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $2.840 |
| 10+ | $2.030 |
| 25+ | $1.850 |
| 50+ | $1.680 |
| 100+ | $1.500 |
| 250+ | $1.380 |
| 500+ | $1.270 |
| 1000+ | $1.170 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC010N04LSATMA1
Newark Part No.
Re-Reel50Y1792
Cut Tape50Y1792
Also Known AsBSC010N04LS, SP000928282
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id100A
Drain Source On State Resistance0.001ohm
On Resistance Rds(on)850µohm
Transistor Case StyleTDSON
Transistor MountingSurface Mount
Power Dissipation Pd139W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation139W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
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Product Overview
The BSC010N04LS is a 40V N-channel Power MOSFET optimized for synchronous rectification. This MOSFET features not only the industry's lowest RDS (on) but also a perfect switching behaviour for fast switching applications. 15% lower RDS (on) and 31% lower Figure of Merit (RDS (on) x Qg) compared to alternative devices has been realized by advanced thin wafer technology. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.
- Highest system efficiency
- Less paralleling required
- Increased power density
- Saving space
- Very low voltage overshoot
- Superior thermal resistance
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.001ohm
Transistor Case Style
TDSON
Power Dissipation Pd
139W
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
100A
On Resistance Rds(on)
850µohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
139W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
