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GA100SICP12-227
Bipolar (BJT) Single Transistor, N Channel, 100 A, 1.2 kV, 0.012 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerGENESIC
Manufacturer Part NoGA100SICP12-227
Newark Part No.08X5871
Your Part Number
Technical Datasheet
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Product Information
ManufacturerGENESIC
Manufacturer Part NoGA100SICP12-227
Newark Part No.08X5871
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id100A
Drain Source Voltage Vds1.2kV
Power Dissipation Pd133W
Drain Source On State Resistance0.012ohm
Operating Frequency Min-
Rds(on) Test Voltage-
Operating Frequency Max-
Transistor Case StyleSOT-227
Gate Source Threshold Voltage Max-
Power Dissipation133W
RF Transistor CaseSOT-227
Operating Temperature Max175°C
No. of Pins4Pins
Product Range-
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
0.012ohm
Rds(on) Test Voltage
-
Transistor Case Style
SOT-227
Power Dissipation
133W
Operating Temperature Max
175°C
Product Range
-
SVHC
To Be Advised
Continuous Drain Current Id
100A
Power Dissipation Pd
133W
Operating Frequency Min
-
Operating Frequency Max
-
Gate Source Threshold Voltage Max
-
RF Transistor Case
SOT-227
No. of Pins
4Pins
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate