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GA05JT12-263
Silicon Carbide MOSFET, Single, N Channel, 5 A, 1.2 kV, TO-263 (D2PAK)
Image is for illustrative purposes only. Please refer to product description.
ManufacturerGENESIC
Manufacturer Part NoGA05JT12-263
Newark Part No.08X5866
Your Part Number
Technical Datasheet
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Product Information
ManufacturerGENESIC
Manufacturer Part NoGA05JT12-263
Newark Part No.08X5866
Technical Datasheet
Transistor PolarityN Channel
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id5A
On Resistance Rds(on)-
Drain Source Voltage Vds1.2kV
Rds(on) Test Voltage-
Drain Source On State Resistance-
Gate Source Threshold Voltage Max-
Transistor Case StyleTO-263 (D2PAK)
No. of Pins3Pins
Power Dissipation Pd58W
Power Dissipation58W
Operating Temperature Max175°C
Product Range-
SVHCLead
Technical Specifications
Transistor Polarity
N Channel
Channel Type
N Channel
On Resistance Rds(on)
-
Rds(on) Test Voltage
-
Gate Source Threshold Voltage Max
-
No. of Pins
3Pins
Power Dissipation
58W
Product Range
-
SVHC
Lead
MOSFET Module Configuration
Single
Continuous Drain Current Id
5A
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
-
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
58W
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate