VTP8350H

The VTP8350H is a Planar Silicon Photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. This diode exhibits low dark current under reverse bias and fast speed of response. Fast response silicon photodiode on ceramic substrate coated with epoxy having a 7.45mm² active area designed for spectral response between 400 and 1150nm. This series of photodiode has been designed for low junction capacitance to achieve faster response time. This photodiode is suitable for operation under reverse bias, which increases the speed of response, can also be used in photovoltaic mode. This device has excellent response in the IR region and is well matched to IR LEDs.

• Visible to IR spectral range
• Medium size active area
• 1 to 2% Linearity over 7 to 9 decades
• Low dark current
• High shunt resistance
• Low capacitance
• Fast response
• Wide field of view

Applications

Sensing & Instrumentation, Metering, Security, Industrial, Commercial