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SI4103DY-T1-GE3
MOSFET, P-CH, -30V, -16A, SOIC
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4103DY-T1-GE3Copy
Manufacturer Standard Lead Time49 weeks
Newark Part No.
Full Reel59AC7478
Re-Reel56AC6585RL
Cut Tape56AC6585
Product RangeTrenchFET Gen III
Your Part Number
668 In Stock
125,000 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $1.360 | $1.36 |
| Total Price | $1.36 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $1.360 |
| 50+ | $0.858 |
| 100+ | $0.566 |
| 250+ | $0.504 |
| 500+ | $0.442 |
| 1000+ | $0.402 |
| 2500+ | $0.357 |
| 5000+ | $0.347 |
Full Reel
| Quantity | Price |
|---|---|
| 5000+ | $0.468 |
| 15000+ | $0.456 |
| 25000+ | $0.450 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4103DY-T1-GE3Copy
Manufacturer Standard Lead Time49 weeks
Newark Part No.
Full Reel59AC7478
Re-Reel56AC6585RL
Cut Tape56AC6585
Product RangeTrenchFET Gen III
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id16A
On Resistance Rds(on)0.0067ohm
Drain Source On State Resistance6700µohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation Pd5.2W
Power Dissipation5.2W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen III
Qualification-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0067ohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation Pd
5.2W
No. of Pins
8Pins
Product Range
TrenchFET Gen III
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
16A
Drain Source On State Resistance
6700µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
Power Dissipation
5.2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate