STGYA120M65DF2AG
IGBT, 650V, 160A, 175DEG C, 625W
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| Cantidad | Precio |
|---|---|
| 1+ | $9.610 |
| 10+ | $8.670 |
| 25+ | $7.850 |
| 50+ | $7.360 |
| 100+ | $6.870 |
| 250+ | $5.730 |
| 500+ | $5.560 |
Información del producto
Resumen del producto
STGYA120M65DF2AG is an automotive-grade trench gate field-stop, M series IGBT. This IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Typical applications include applications, heating system, HV battery disconnect and fire-off system and main inverter (electric traction).
- AEC-Q101 qualified
- 6µs of short-circuit withstand time
- VCE(sat) = 1.65 V (typ.) at IC = 120 A
- Tight parameter distribution
- Safer paralleling
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Max247 long leads package
- Soft and very fast recovery antiparallel diode
- Maximum junction temperature TJ is 175°C
Especificaciones técnicas
160
1.65V
625W
650
MAX-247
175
M
-
160A
1.65
625
650V
3Pines
Agujero Pasante
AEC-Q101
No SVHC (25-Jun-2025)
Documentos técnicos (2)
Legislación y medioambiente
RoHS
RoHS
Certificado de conformidad del producto