L6388ED013TR

L6388ED013TR is a high voltage gate driver, manufactured with the BCD ™ “offline” technology, and able to drive a half-bridge of power MOSFET/IGBT devices. The high-side (floating) section is enabled to work with voltage rail up to 600 V. Both device outputs can sink and source 650mA and 400mA respectively and cannot be simultaneously driven high thanks to an integrated interlocking function. Further prevention from outputs cross conduction is guaranteed by the deadtime function. This device has two input and two output pins and guarantees the outputs switch in phase with inputs. The logic inputs are CMOS/TTL compatible (3.3V, 5V and 15V) to ease the interfacing with controlling devices. Applications include home appliances, industrial applications and drives, motor drivers, DC, AC, PMDC and PMAC motors, induction heating, HVAC, factory automation, lighting applications, and power supply systems.

• 3.3V, 5V, 15V CMOS/TTL input comparators with hysteresis and pull-down
• Internal bootstrap diode, outputs in phase with inputs
• Deadtime and interlocking function, high voltage rail up to 600V
• Rise time is 70ns typical at (CL = 1000pF, VCC = 15V; TJ = 25°C)
• Fall time is 40ns typical at (CL = 1000pF, VCC = 15V; TJ = 25°C)
• Quiescent current is 350µA typical at (VCC = 15V)
• Bootstrap driver on resistance is 125 ohm typical at (VCC±12.5V)
• High voltage leakage current is 10µA maximum at ( Vhvg = VOUT = VBOOT = 600V)
• Source short-circuit current is 400mA typical at (VIN = Vih (tp <lt/> 10µs))
• Junction temperature range from -40°C to 125°C, SO-8 package