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FQA6N90C-F109
Power MOSFET, N Channel, 900 V, 6 A, 1.93 ohm, TO-3PN, Through Hole
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No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQA6N90C-F109Copy
Newark Part No.31Y1507
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds900V
Continuous Drain Current Id6A
On Resistance Rds(on)1.93ohm
Drain Source On State Resistance1.93ohm
Transistor Case StyleTO-3PN
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd198W
Gate Source Threshold Voltage Max5V
Power Dissipation198W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (17-Jan-2022)
Product Overview
The FQA6N90C_F109 is a N-channel QFET® enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- Low gate charge (30nC)
- Low Crss (11pF)
- 100% avalanche tested
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
900V
On Resistance Rds(on)
1.93ohm
Transistor Case Style
TO-3PN
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
6A
Drain Source On State Resistance
1.93ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
198W
Power Dissipation
198W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (17-Jan-2022)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (17-Jan-2022)
Download Product Compliance Certificate
Product Compliance Certificate