IXTT1N300P3HV

IXTT1N300P3HV is a Polar3™ standard power MOSFET that is suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, laser and x-ray generation systems, high-voltage automated test equipment, CT and MRI scanners, ultrasound machines, and energy tapping applications from the power grid. Due to the positive temperature coefficient of their on-state resistance, this high-voltage Power MOSFET can be operated in parallel, thereby eliminating the need for lower voltage, series-connected devices and enabling cost-effective power systems. Other benefits include component reduction in gate drive circuitry, simpler design, improved reliability, and PCB space saving.

• Easy to mount, space savings, high power density
• High blocking voltage, positive temperature coefficient of RDSON
• Proprietary high-voltage packages
• N-channel enhancement mode
• Drain source voltage is 3000V
• On resistance Rds(on) is 50 ohm
• 10V Rds(on) test voltage, 195W power dissipation
• 1A continuous drain current, drain source on state resistance is 50 ohm
• 4V gate source threshold voltage
• TO-268S package, -55 to +150°C junction temperature range