IRLR2908TRPBF
MOSFET de Potencia, Canal N, 80 V, 30 A, 0.028 ohm, TO-252AA, Montaje Superficial
¿Necesita más?
| Tipo de embalaje | Cantidad | Precio unitario: | Total |
|---|---|---|---|
| Cinta adhesiva | 1 | $2.050 | $2.05 |
| Total Precio | $2.05 | ||
| Cantidad | Precio |
|---|---|
| 1+ | $2.050 |
| 10+ | $1.380 |
| 25+ | $1.250 |
| 50+ | $1.120 |
| 100+ | $0.986 |
| 250+ | $0.903 |
Información del producto
Resumen del producto
The IRLR2908TRPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this HEXFET® power MOSFET is a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
- Advanced process technology
- Ultra-low ON-resistance
- Dynamic dV/dt rating
- Repetitive avalanche allowed up to Tjmax
- Logic level
Especificaciones técnicas
N Channel
80V
0.028ohm
TO-252AA
10V
2.5V
3Pines
-
MSL 1 - Unlimited
0
30A
0
Surface Mount
0
120W
175°C
-
No SVHC (25-Jun-2025)
Documentos técnicos (2)
Alternativas para el número de pieza IRLR2908TRPBF
1 producto (s) encontrado (s)
Productos relacionados
3 productos encontrados
Legislación y medioambiente
RoHS
RoHS
Certificado de conformidad del producto