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| Cantidad | Precio |
|---|---|
| 1+ | $1.600 |
Información del producto
Resumen del producto
The IR2111SPBF is a high voltage high speed power MOSFET and IGBT Half-bridge Driver with dependent high and low-side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Internal dead-time is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout for both channels
- CMOS Schmitt-triggered inputs with pull-down
- Matched propagation delay for both channels
- Internally set dead-time
- High-side output in phase with input
Especificaciones técnicas
2Canales
Half Bridge
SOIC
SOIC
Non-Inverting
500
20
125
150
-
No SVHC (25-Jun-2025)
-
MOSFET
8Pines
Surface Mount
250
10
-40
750
-
MSL 2 - 1 year
Documentos técnicos (3)
Legislación y medioambiente
RoHS
RoHS
Certificado de conformidad del producto
