CY7C10612G30-10ZSXI

CY7C10612G30-10ZSXI is a high performance CMOS fast static RAM device with embedded ECC. The device includes an error indication pin that signals an error detection and correction event during a read cycle. To write to the device, take chip enables (active-low CE) and write enable (active-low WE) input LOW. To read from the device, take chip enable (active-low CE) and output enable (active-low OE) LOW while forcing the write enable (active-low WE) HIGH. The input or output pins (I/O0 through I/O15) are placed in a high impedance state when the device is deselected (active-low CE HIGH), the outputs are disabled (active-low OE HIGH), the active-low BHE and active-low BLE are disabled (active-low BHE, active-low BLE HIGH), or during a write operation (active-low CE LOW and active-low WE LOW).

• Embedded error-correcting code (ECC) for single-bit error correction
• Low active current ICC is 90mA typical
• Low CMOS standby current ISB2 is 20mA typical
• Operating voltages of 3.3 ±0.3V
• 1.0V data retention
• Transistor-transistor logic (TTL) compatible inputs and outputs
• ERR pin to indicate 1-bit error detection and correction
• High speed, tAA=10ns
• 54-pin TSOP II package
• Industrial ambient temperature range from -40°C to +85°C