CY62148EV30LL-45BVXI

CY62148EV30LL-45BVXI is a static RAM. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (CE (active high) HIGH). The eight input and output pins (I/O0 through I/O7) are placed in a high impedance state when the device is deselected (CE (active high) HIGH), the outputs are disabled (OE (active high) HIGH), or during a write operation (CE (active high) LOW and WE (active high) LOW). To write to the device, take Chip Enable (CE (active high)) and Write Enable (WE, (active high)) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A18).

• 4Mbit density, × 8 bus width, 90nm process technology, 3V typical voltage
• Low power, 45ns speed grade
• 45ns very high speed, 2.20V to 3.60V wide voltage range
• Pin compatible with CY62148DV30, ultra-low standby power
• 2.5µA typical standby current, 7µA (industrial) maximum standby current
• ultra-low active power, 3.5mA at f = 1MHz typical active current
• Easy memory expansion with CE (active high) and OE (active high) features
• Automatic power down when deselected
• Complementary metal oxide semiconductor (CMOS) for optimum speed and power
• 36-ball VFBGA package, industrial temperature grade range from -40°C to +85°C