CY14B108N-ZSP25XI

CY14B108N-ZSP25XI is a fast static RAM (SRAM), with a non-volatile element in each memory cell. The memory is organized as 512K words of 16 bits each. The embedded non-volatile elements incorporate Quantum Trap technology, producing the world’s most reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable Quantum Trap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory. Both the STORE and RECALL operations are also available under software control.

• Hands off automatic STORE on power-down with only a small capacitor
• RECALL to SRAM initiated by software or power-up
• Infinite Read, Write, and RECALL cycles, 1 million STORE cycles to Quantum Trap
• 20 year data retention, single 3V +20%, –10% operation
• Power supply voltage range from 2.7 to 3.6V
• Average VCC current is 75mA maximum at (tRC = 20ns)
• VCC standby current is 10mA maximum at (CE > (VCC – 0.2 V), VIN < 0.2 V or > (VCC – 0.2 V))
• Input capacitance is 14pF maximum at (TA = 25°C, f = 1MHz, VCC = VCC(Typ))
• Industrial ambient temperature range from -40°C to +85°C, 54-pin TSOP package