AS4C16M16D1A-5TIN

AS4C16M16D1A-5TIN is a high-speed CMOS double data rate synchronous DRAM (SDRAM) containing 256Mbits. It is internally configured as a quad 4M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Accesses begin with the registration of a BankActivate command which is then followed by a read or write command. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either auto or self refresh are easy to use. By having a programmable mode register and extended mode register, the system can choose most suitable modes to maximize its performance. It is well suited for applications requiring high memory bandwidth, resulting in a device particularly well suited to high-performance main memory and graphics applications.

• Fast clock rate: 200MHz, bi-directional DQS, DLL enable/disable by EMRS
• Fully synchronous operation, internal pipeline architecture, differential clock CK and active-low CK
• Programmable mode and extended mode registers, CAS latency: 2, 2.5, 3, burst length: 2, 4, 8
• Individual byte-write mask control, DM write latency = 0, auto refresh and self refresh
• 8192 refresh cycles / 64ms, precharge and active power down
• Power supplies: VDD and VDDQ = 2.5V ± 0.2V
• Interface: SSTL-2 I/O interface
• 400Mbps/pin data rate
• 66-pin TSOPII package
• Industrial temperature range from -40°C to 85°C