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DIW120SIC023-AQ
Silicon Carbide MOSFET, Single, N Channel, 125 A, 1.2 kV, 23 mohm, TO-247
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ManufacturerDIOTEC SEMICONDUCTOR
Manufacturer Part NoDIW120SIC023-AQCopy
Newark Part No.16AM8165
Your Part Number
30 In Stock
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20 Delivery in 2-4 Business Days(UK stock)
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| Quantity | Price |
|---|---|
| 1+ | $29.820 |
| 5+ | $29.230 |
| 10+ | $28.640 |
| 25+ | $28.340 |
| 50+ | $28.040 |
| 100+ | $26.860 |
Price for:Each
Minimum: 1
Multiple: 1
$29.82
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIOTEC SEMICONDUCTOR
Manufacturer Part NoDIW120SIC023-AQCopy
Newark Part No.16AM8165
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id125A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance23mohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max2.9V
Power Dissipation600W
Operating Temperature Max175°C
Product Range-
SVHCLead
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
125A
Drain Source On State Resistance
23mohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
2.9V
Operating Temperature Max
175°C
SVHC
Lead
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation
600W
Product Range
-
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate