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ZXMS6004DN8-13
MOSFET, DUAL N-CH, 60V, 1.2A, SOIC
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoZXMS6004DN8-13Copy
Manufacturer Standard Lead Time14 weeks
Newark Part No.
Full Reel86AK6630
Re-Reel07AH4945RL
Cut Tape07AH4945
Product RangeIntelliFET Series
Your Part Number
Available to Order
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Full Reel | 5 | $0.416 | $0.00 |
| Total Price | $2.08 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | $1.800 |
| 50+ | $1.190 |
| 100+ | $0.841 |
| 250+ | $0.767 |
| 500+ | $0.692 |
| 1000+ | $0.645 |
| 2500+ | $0.632 |
| 5000+ | $0.619 |
Full Reel
| Quantity | Price |
|---|---|
| 2500+ | $0.416 |
| 5000+ | $0.396 |
| 10000+ | $0.380 |
| 15000+ | $0.376 |
If you would like a smaller amounts you can select other packaging type
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoZXMS6004DN8-13Copy
Manufacturer Standard Lead Time14 weeks
Newark Part No.
Full Reel86AK6630
Re-Reel07AH4945RL
Cut Tape07AH4945
Product RangeIntelliFET Series
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel1.2A
Continuous Drain Current Id P Channel1.2A
Drain Source On State Resistance N Channel0.35ohm
Drain Source On State Resistance P Channel0.35ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel1.21W
Power Dissipation P Channel1.21W
Operating Temperature Max150°C
Product RangeIntelliFET Series
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
1.2A
Drain Source On State Resistance P Channel
0.35ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.21W
Product Range
IntelliFET Series
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
1.2A
Drain Source On State Resistance N Channel
0.35ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
1.21W
Operating Temperature Max
150°C
Qualification
-
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability