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DMT6013LSS-13
MOSFET, N-CH, 60V, 10A, SOIC
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMT6013LSS-13Copy
Manufacturer Standard Lead Time42 weeks
Newark Part No.28AK8889
Your Part Number
35 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $0.917 |
| 10+ | $0.568 |
| 25+ | $0.501 |
| 50+ | $0.434 |
| 100+ | $0.367 |
| 250+ | $0.323 |
| 500+ | $0.280 |
| 1000+ | $0.252 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.92
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMT6013LSS-13Copy
Manufacturer Standard Lead Time42 weeks
Newark Part No.28AK8889
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id10A
Drain Source On State Resistance0.0112ohm
On Resistance Rds(on)0.0112ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation Pd1.4W
Power Dissipation1.4W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0112ohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation Pd
1.4W
No. of Pins
8Pins
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Continuous Drain Current Id
10A
On Resistance Rds(on)
0.0112ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
Power Dissipation
1.4W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate