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DMT6008LFG-13
MOSFET, N-CH, 60V, 60A, POWERDI 3333
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMT6008LFG-13Copy
Manufacturer Standard Lead Time42 weeks
Newark Part No.28AK8879
Your Part Number
2,473 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $1.620 |
| 10+ | $0.938 |
| 25+ | $0.844 |
| 50+ | $0.750 |
| 100+ | $0.655 |
| 250+ | $0.596 |
| 500+ | $0.538 |
| 1000+ | $0.485 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.62
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMT6008LFG-13Copy
Manufacturer Standard Lead Time42 weeks
Newark Part No.28AK8879
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id60A
On Resistance Rds(on)0.005ohm
Drain Source On State Resistance5000µohm
Transistor Case StylePowerDI 3333
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation Pd41W
Power Dissipation41W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.005ohm
Transistor Case Style
PowerDI 3333
Rds(on) Test Voltage
10V
Power Dissipation Pd
41W
No. of Pins
8Pins
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Continuous Drain Current Id
60A
Drain Source On State Resistance
5000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
Power Dissipation
41W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate