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DMT10H072LFV-7
MOSFET, N-CH, 100V, 20A, POWERDI 3333
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMT10H072LFV-7Copy
Newark Part No.28AK8860
Your Part Number
7 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $1.030 |
| 10+ | $0.642 |
| 25+ | $0.567 |
| 50+ | $0.492 |
| 100+ | $0.417 |
| 250+ | $0.369 |
| 500+ | $0.320 |
| 1000+ | $0.289 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.03
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMT10H072LFV-7Copy
Newark Part No.28AK8860
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id20A
Drain Source On State Resistance0.0506ohm
On Resistance Rds(on)0.0506ohm
Transistor Case StylePowerDI 3333
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.8V
Power Dissipation Pd2W
Power Dissipation2W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0506ohm
Transistor Case Style
PowerDI 3333
Rds(on) Test Voltage
10V
Power Dissipation Pd
2W
No. of Pins
8Pins
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
20A
On Resistance Rds(on)
0.0506ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.8V
Power Dissipation
2W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate