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DMT10H010LSS-13
MOSFET, N-CH, 100V, 29.5A, SOIC
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMT10H010LSS-13Copy
Newark Part No.28AK8857
Your Part Number
235 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $2.220 |
| 10+ | $1.410 |
| 25+ | $1.260 |
| 50+ | $1.110 |
| 100+ | $0.959 |
| 250+ | $0.861 |
| 500+ | $0.762 |
| 1000+ | $0.698 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.22
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMT10H010LSS-13Copy
Newark Part No.28AK8857
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id29.5A
On Resistance Rds(on)0.008ohm
Drain Source On State Resistance8000µohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.9V
Power Dissipation Pd1.4W
Power Dissipation1.4W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.008ohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation Pd
1.4W
No. of Pins
8Pins
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Continuous Drain Current Id
29.5A
Drain Source On State Resistance
8000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.9V
Power Dissipation
1.4W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate