Print Page
Image is for illustrative purposes only. Please refer to product description.

ManufacturerDIODES INC.
Manufacturer Part NoDMN3042L-7
Newark Part No.
Re-Reel07AH3766
Cut Tape07AH3766
Your Part Number
3 In Stock
Need more?
Same day shipping
Order before 8pm EST standard shipping
Available in quantity shown
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $0.059 | $0.06 |
| Total Price | $0.06 | ||
Cut Tape & Re-Reel
| Quantity | Price | Promotional price |
|---|---|---|
| 1+ | $0.480 | $0.059 |
| 10+ | $0.293 | $0.059 |
| 25+ | $0.263 | $0.059 |
| 50+ | $0.232 | $0.059 |
| 100+ | $0.202 | $0.059 |
| 250+ | $0.182 | $0.059 |
| 500+ | $0.161 | $0.059 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN3042L-7
Newark Part No.
Re-Reel07AH3766
Cut Tape07AH3766
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id5.8A
Drain Source On State Resistance0.0265ohm
On Resistance Rds(on)0.021ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd720mW
Gate Source Threshold Voltage Max1.4V
Power Dissipation720mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Alternatives for DMN3042L-7
1 Product Found
Product Overview
DMN3042L-7 is a N-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(on)) and maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include battery charging, power management functions, DC-DC converters, portable power adaptors.
- Low on-resistance, low gate threshold voltage
- Low input capacitance, fast switching speed
- Low input/output leakage
- Drain-source voltage is 30V at TA = +25°C
- Gate-source voltage is ±12V at TA = +25°C
- Continuous drain current is 5.8A at TA = +25°C, steady state, VGS = 10V
- Pulsed drain current (10µs pulse, duty cycle = 1%) is 30A at TA = +25°C
- Total power dissipation is 0.72W at TA = +25°C
- SOT23 (standard) package
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0265ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
5.8A
On Resistance Rds(on)
0.021ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
720mW
Power Dissipation
720mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
