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DMN10H120SFG-7
MOSFET, N-CH, 100V, 3.8A, POWERDI 3333
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMN10H120SFG-7Copy
Newark Part No.32AK9130
Your Part Number
957 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $1.080 |
| 10+ | $0.673 |
| 25+ | $0.595 |
| 50+ | $0.517 |
| 100+ | $0.440 |
| 250+ | $0.390 |
| 500+ | $0.340 |
| 1000+ | $0.308 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.08
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN10H120SFG-7Copy
Newark Part No.32AK9130
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id3.8A
Drain Source On State Resistance0.068ohm
On Resistance Rds(on)0.068ohm
Transistor Case StylePowerDI 3333
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation1W
Power Dissipation Pd1W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.068ohm
Transistor Case Style
PowerDI 3333
Rds(on) Test Voltage
10V
Power Dissipation
1W
No. of Pins
8Pins
Product Range
-
Automotive Qualification Standard
-
Channel Type
N Channel
Continuous Drain Current Id
3.8A
On Resistance Rds(on)
0.068ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate