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ManufacturerDIODES INC.
Manufacturer Part No2N7002T-7-F
Newark Part No.25R5682
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 17 week(s)
Packaging Options
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.267 |
| 10+ | $0.171 |
| 25+ | $0.151 |
| 50+ | $0.132 |
| 100+ | $0.112 |
| 250+ | $0.100 |
| 500+ | $0.087 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part No2N7002T-7-F
Newark Part No.25R5682
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id800mA
On Resistance Rds(on)13.5ohm
Drain Source On State Resistance7.5ohm
Transistor Case StyleSOT-523
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd150mW
Gate Source Threshold Voltage Max2V
Power Dissipation150mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The 2N7002T-7-F is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over alloy 42 lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Low ON-resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Low input/output leakage
- Ultra-small surface-mount package
- Halogen-free, Green device
- Moisture sensitivity level 1 as per J-STD-020
- UL94V-0 Flammability rating
Applications
Power Management, Defence, Military & Aerospace, Lighting, Commercial
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
13.5ohm
Transistor Case Style
SOT-523
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
800mA
Drain Source On State Resistance
7.5ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
150mW
Power Dissipation
150mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate