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2N7002-7-F
MOSFET, N CHANNEL, 60 V, 800mA, SOT-23
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part No2N7002-7-F
Newark Part No.
Full Reel86AK6726
Cut Tape25R5679
Your Part Number
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $0.187 | $0.19 |
| Total Price | $0.19 | ||
Cut Tape
| Quantity | Price |
|---|---|
| 1+ | $0.187 |
| 10+ | $0.119 |
| 25+ | $0.105 |
| 50+ | $0.090 |
| 100+ | $0.076 |
| 250+ | $0.067 |
| 500+ | $0.057 |
| 1000+ | $0.051 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.041 |
| 6000+ | $0.039 |
| 12000+ | $0.037 |
| 18000+ | $0.035 |
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Product Information
ManufacturerDIODES INC.
Manufacturer Part No2N7002-7-F
Newark Part No.
Full Reel86AK6726
Cut Tape25R5679
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id210mA
On Resistance Rds(on)13.5ohm
Drain Source On State Resistance5ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd300mW
Gate Source Threshold Voltage Max2.5V
Power Dissipation370mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The 2N7002-7-F is a 60V N-channel enhancement mode Field Effect Transistor with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. This MOSFET has been designed to minimize the on-state resistance (RDS (on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. The case is made of molded plastic, "Green" molding compound (UL94V-0).
- Low on-resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Low input/output leakage
- Halogen and antimony-free
- Green device
- Qualified to AEC-Q101 standards for high reliability
Applications
Motor Drive & Control, Power Management, Defence, Military & Aerospace
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
13.5ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
210mA
Drain Source On State Resistance
5ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
300mW
Power Dissipation
370mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate